Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPP023NE7N3GXKSA1
Manufacturer
InfineonManufacturer Product Number
IPP023NE7N3GXKSA1
Description
N-Channel 75 V 120 A 2.3 mO 155 nC OptiMOS 3 Power Transistor - TO-220
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Power | 300W |
| Drain-Source Voltage | 75V |
| Continuous Drain Current | 120 A |
| On-Resistance | 2.3mΩ@100A, 10V |
| Gate Charge | 206nC@10V |
| Threshold Voltage | 3.8V@273µA |
| Input Capacitance | 14400pF@37.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 487
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.6347 | |
| 50+ | $ 2.2698 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPP024N06N3GXKSA1
MOSFET
Infineon
IPP024N08NF2SAKMA1
原装正品
Infineon
IPP026N04NF2S
--
Infineon
IPP026N04NF2SAKMA1
Infineon's StrongIRFET™ 2 power MOSFET 40 V features low R DS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Infineon
