Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPP045N10N3GXKSA1
Manufacturer
InfineonManufacturer Product Number
IPP045N10N3GXKSA1
Description
场效应管(MOSFET) 214W 100V 100A 1个N沟道 TO-220-3
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Saturation Current | 100A |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source On-Resistance | 0.0045Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 7,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.2644 | |
| 10+ | $ 1.0444 | |
| 500+ | $ 0.9957 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
IPP048N04N G
--
Infineon
IPP048N04NG-VB
--
Vbsemi
IPP048N04NGXKSA1
晶体管: N-MOSFET; 单极; 40V; 70A; 79W; PG-TO220-3; OptiMOS™ 3
Infineon
IPP048N12N3GXKSA1
N-Channel 120 V 100 A 4.8 mO 137 nC OptiMOS 3 Power Transistor - TO-220
Infineon
