Manufacturer
InfineonManufacturer Product Number
IPP110N20NAAKSA1
Description
晶体管: N-MOSFET; 单极; 200V; 88A; 300W; PG-TO220-3; OptiMOS™ 3
Manufacturer Standard Lead Time
3-5
Detailed Description
晶体管: N-MOSFET; 单极; 200V; 88A; 300W; PG-TO220-3; OptiMOS™ 3
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Power | 300W |
| Drain-Source Voltage | 200 V |
| Gate Charge | 87nC@10V |
| Continuous Drain Current | 88A |
| Threshold Voltage | 4V @ 270µA |
| Input Capacitance | 7100pF @ 100V |
| On-Resistance | 10.7mΩ @ 88A, 10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 6.7552 |
Minimum:1/Multiple:1
Total amount: