Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPT010N08NM5ATMA1
Manufacturer
InfineonManufacturer Product Number
IPT010N08NM5ATMA1
Description
场效应管(MOSFET) 375W；3.8W 80V 425A；43A 1个N沟道 HSOF-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 80 V |
| Gate Charge | 223 nC @ 10 V |
| Threshold Voltage | 3.8 V @ 280 µA |
| Power | 3.8 W, 375 W |
| Continuous Drain Current | 43A, 425A |
| On-Resistance | 1.05mΩ@150A, 10V |
| Input Capacitance | 16000pF@40V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 10
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 6.7538 | |
| 10+ | $ 5.7484 | |
| 30+ | $ 5.1343 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPT012N06NATMA1
表面贴装 N 沟道 60V 240A（Tc） 214W（Tc） PG-HSOF-8-1
Infineon
IPT012N06NATMA1
--
Infineon
IPT012N08N5
MOS场效应管 IPT012N08N5 PG-HSOF-8-1
Infineon
IPT012N08N5(TOKMAS)
--
Tokmas
