Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPT017N12NM6ATMA1
Manufacturer
InfineonManufacturer Product Number
IPT017N12NM6ATMA1
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 120 volt |
| Continuous Drain Current | 29A, 331A |
| Power | 3W, 395W |
| Gate Charge | 141nC@10V |
| On-Resistance | 1.7mΩ@150A, 10V |
| Threshold Voltage | 3.6V@275µA |
| Input Capacitance | 11000pF@60V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,287
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 7.5239 | |
| 10+ | $ 5.1357 | |
| 100+ | $ 3.8518 | |
| 500+ | $ 3.6749 | |
| 1000+ | $ 3.6025 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIPT019N08N5ATMA1
--
Infineon
IPT020N10N3
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPT020N10N3, 300 A, Vds=100 V, 8引脚 HSOF封装
Infineon
IPT020N10N3ATMA1
MOSFET N-CH 100V 300A 8HSOF
Infineon
IPT020N10N3ATMA1
MOSFET N-CH 100V 300A 8HSOF
Infineon
