Manufacturer
InfineonManufacturer Product Number
IRF3808SPBF
Description
Infineon HEXFET 系列 Si N沟道 MOSFET IRF3808SPBF, 106 A, Vds=75 V, 3引脚 D2PAK封装
Manufacturer Standard Lead Time
3-5
Detailed Description
Infineon HEXFET 系列 Si N沟道 MOSFET IRF3808SPBF, 106 A, Vds=75 V, 3引脚 D2PAK封装
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Drain-Source Voltage | 75V |
| Power | 200W |
| Gate Charge | 220 nC @ 10 V |
| On-Resistance | 7mΩ @ 82A, 10V |
| Input Capacitance | 5310pF @ 25V |
| Continuous Drain Current | 106 A |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.1711 |
Minimum:1/Multiple:1
Total amount:
IRF3808STRLPBF
IRF3808S Series N-Channel 75 V 7 mO 200 W HEXFET MosFet Surface Mount - D2-PAK-3
Infineon
IRF3808STRLPBF
IRF3808S Series N-Channel 75 V 7 mO 200 W HEXFET MosFet Surface Mount - D2-PAK-3
Infineon