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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRFB4310ZPBF

Manufacturer

Infineon

Manufacturer Product Number

IRFB4310ZPBF

Description

场效应管(MOSFET) 250W 100V 120A 1个N沟道 TO-220-3

Manufacturer Standard Lead Time

2-3

Detailed Description

场效应管(MOSFET) 250W 100V 120A 1个N沟道 TO-220-3

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Gate-Source Breakdown Voltage	100V
Drain-Source Saturation Current	120A
Drain-Source On-Resistance	0.006Ω

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 1

Quantity	Unit Price	Ext Price
1+	$ 0.7046
100+	$ 0.5598
1000+	$ 0.5320

Price For：Each

Minimum:1/Multiple:1

Total amount:

Associated Product

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IRFB4310ZPBF-VB

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Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Infineon

IRFB4321PBF

场效应管(MOSFET) 350W 150V 85A 1个N沟道 TO-220AB

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IRFB4321PBF

Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Infineon