Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IRFB5620PBF
Manufacturer
InfineonManufacturer Product Number
IRFB5620PBF
Description
Single N-Channel 200 V 72.5 mOhm 25 nC HEXFET� Power Mosfet - TO-220-3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-Channel |
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 25A |
| Threshold Voltage | 5V @ 100µA |
| Gate Charge | 38nC@10V |
| Power | 144W |
| On-Resistance | 72.5mΩ@15A,10V |
| Input Capacitance | 1710 picofarads @ 50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 178
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6307 | |
| 10+ | $ 1.2658 | |
| 20+ | $ 1.2087 | |
| 50+ | $ 1.1405 | |
| 100+ | $ 1.0945 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllIRFB7430PBF
晶体管: N-MOSFET; 单极; 40V; 409A; 375W; TO220AB; 系列: HEXFET®
Infineon
IRFB7430PBF
Single N-Channel 40 V 375 W 460 nC Silicon Through Hole Mosfet - TO-220-3
Infineon
IRFB7430PBF
场效应管(MOSFET) 375W 40V 195A 1个N沟道 TO-220AB
Infineon
IRFB7430PBF
晶体管: N-MOSFET; 单极; 40V; 409A; 375W; TO220AB; 系列: HEXFET®
Infineon