Manufacturer
InfineonManufacturer Product Number
IRGB4620DPBF
Description
晶体管: IGBT; 600V; 20A; 140W; TO220AB
Manufacturer Standard Lead Time
3-5
Detailed Description
晶体管: IGBT; 600V; 20A; 140W; TO220AB
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 140W |
| Ji Dian Ji Ji Chuan Voltage(vces) | 600V |
| Operating Temperature | -40 ℃ ~ 175 ℃ |
| Ji Dian Ji Current(ic) | 32A |
| Fan Xiang Hui Fu Time | 68ns |
| Ji Dian Ji Mai Chong Current(icm) | 36A |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6237 |
Minimum:1/Multiple:1
Total amount:
IRGB6B60KDPBF
N-Channel 600 V 18 A Flange Mount Insulated Gated Bipolar Transistor - TO-220AB
Infineon