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ISP650P06NM
Manufacturer
InfineonManufacturer Product Number
ISP650P06NM
Description
场效应管(MOSFET) 4.2W 60V 3.7A 1个P沟道 SOT-223-4
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 60 V |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Type | 1 P-Channel |
| Gate Charge | 39 nC @ 10 V |
| Continuous Drain Current | 3.7A |
| Power | 4.2W |
| Input Capacitance | 1.6nF @ 30V |
| Reverse Transfer Capacitance | 54mΩ@10V,3.7A |
| On-Resistance | 50mWx2@32Ω |
| Threshold Voltage | 3.14V~3.63V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 694
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5556 | |
| 100+ | $ 0.4400 | |
| 1000+ | $ 0.4164 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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