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SPB20N60C3ATMA1
Manufacturer
InfineonManufacturer Product Number
SPB20N60C3ATMA1
Description
N-Channel 650 V 0.19 Ohm Cool MOS� Power Transistor - PG-TO263-3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Power | 208W |
| Continuous Drain Current | 20.7A |
| Gate Charge | 114nC@10V |
| On-Resistance | 190mΩ@13.1A，10V |
| Threshold Voltage | 3.9V@1mA |
| Input Capacitance | 2400pF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1000+ | $ 1.5917 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSPB20N60S5
MOSFET COOL MOS N-CH 600V 20A
Infineon
SPB21N50C3ATMA1
原装正品
Infineon
SPB80P06PGATMA1
P-Channel 60 V 0.023 Ohm SIPMOS� Power-Transistor - PG-TO263-3
Infineon
SPBD-001T-P0.5
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JST
