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SPD04P10PGBTMA1
Manufacturer
InfineonManufacturer Product Number
SPD04P10PGBTMA1
Description
晶体管: P-MOSFET; 单极; -100V; -4A; 38W; PG-TO252-3; SIPMOS™
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Continuous Drain Current | 4A |
| Type | P-channel |
| Operating Temperature | -55℃ ~ 175℃ |
| Drain-Source Voltage | 100 V |
| Gate Charge | 12nC@10V |
| Power | 38W |
| Threshold Voltage | 4V @ 380µA |
| On-Resistance | 1Ω@2.8A，10V |
| Input Capacitance | 319pF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,553
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9622 | |
| 10+ | $ 0.6573 | |
| 100+ | $ 0.6211 | |
| 500+ | $ 0.5514 | |
| 1000+ | $ 0.4038 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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MOSFET P-CH 100V 4.2A
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SPD04P10PLGBTMA1
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