Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SPD08N50C3ATMA1
Manufacturer
InfineonManufacturer Product Number
SPD08N50C3ATMA1
Description
--
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Gate Charge | 32nC @ 10V |
| Drain-Source Voltage | 500V |
| Power | 83W |
| Continuous Drain Current | 7.6A |
| On-Resistance | 600mΩ@4.6A，10V |
| Threshold Voltage | 3.9V@350µA |
| Input Capacitance | 750pF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 10
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.1682 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SPD08P06P G
MOSFET P-Ch -60V -8.8A DPAK-2
Infineon
SPD08P06PGBTMA1
P-Channel 60 V 8.83 A 300 mO 10 nC SipMOS Small Signal Transistor - DPAK
Infineon
SPD08P06PGBTMA1
Trans MOSFET P-CH 60V 8.83A Automotive 3-Pin(2+Tab) DPAK T/R
Infineon
SPD09P06PLG-VB
--
Vbsemi
