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LBSS84LT1G
Manufacturer
LRCManufacturer Product Number
LBSS84LT1G
Description
MOSFET
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Power | 225mW |
| Type | P-Channel |
| Drain-Source Voltage | -50V |
| Continuous Drain Current | -0.13A |
| On-Resistance | 5Ω@-100mA, -10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 9
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0125 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
LBSS84LT1G-MS
类型：P沟道@@漏源电压(Vdss)：55V@@连续漏极电流(Id)：300mA@@功率(Pd)：1W@@导通电阻(RDS(on)@Vgs,Id)：@@4.5Ω@10V,300mA
MSKSEMI
LBSS84WT1G
连续漏极电流Id：0.13 封装/外壳：SC-70 漏源极电压Vds：50V Pd-功率耗散(Max)：0.13W 栅极电压Vgs：0.8V
LRC
LBSS84WT1G
MOS场效应晶体管,20v,0.13a, p-ch, sc70
LRC
LBT17
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FNRC
