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LN2292LT1G
Manufacturer
LRCManufacturer Product Number
LN2292LT1G
Description
漏源极电压Vds：100V Rds On(Max)@Id,Vgs：160 FET类型：N-Channel 封装/外壳：SOT23 Pd-功率耗散(Max)：1.25W
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-Channel |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 3A |
| Power | 1.25 W |
| On-Resistance | 200mΩ@3A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 298
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0306 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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LN2302BLT1G
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LN2302BLT1G
封装/外壳：SOT-23 FET类型：N-Channel Pd-功率耗散(Max)：1.25W Rds On(Max)@Id,Vgs：130mΩ@2.2A,1.8V 工作温度：-55°C~150°C
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LN2302LT1G
20V,N-MOS
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