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LP4435T1G

Manufacturer

LRC

Manufacturer Product Number

LP4435T1G

Description

封装/外壳:SO-8 FET类型:P-Channel Rds On(Max)@Id,Vgs:24mΩ@-7A,-10V Pd-功率耗散(Max):3.1W 工作温度:-55°C~150°C

Manufacturer Standard Lead Time

5-7个

Detailed Description

封装/外壳:SO-8 FET类型:P-Channel Rds On(Max)@Id,Vgs:24mΩ@-7A,-10V Pd-功率耗散(Max):3.1W 工作温度:-55°C~150°C

Datasheet

Product Attributes

Type Description
Category Boxes, Enclosures, Racks andBox Components
Operating Temperature -55℃~150℃
Type P-Channel
Power 3.1W
Drain-Source Voltage -30V
Continuous Drain Current -9.5A
On-Resistance 24mΩ@-7A, -10V

Documents & Media

Resource Type Link

Environmental & Export Classifications

Attribute Description

Additional Resources

Attribute Description

In Stock: 5

Quantity Unit Price Ext Price
5+ $ 0.1337
50+ $ 0.1058
150+ $ 0.0905
Price For:Each

Minimum:1/Multiple:1

Total amount:

Associated Product

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0.067325s