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LSI1012N3T5G
Manufacturer
LRCManufacturer Product Number
LSI1012N3T5G
Description
封装/外壳：SOT-883 FET类型：N-Channel Pd-功率耗散(Max)：250mW Rds On(Max)@Id,Vgs：850mΩ@500mA,2.5V 工作温度：-55°C~150℃
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-Channel |
| Drain-Source Voltage | 20V |
| Power | 250mW |
| Continuous Drain Current | 500 mA |
| On-Resistance | 850mΩ@500mA,2.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 9,060
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 20+ | $ 0.0292 | |
| 200+ | $ 0.0237 | |
| 600+ | $ 0.0195 | |
| 2000+ | $ 0.0181 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllLSI1012XT1G
小信号MOS
LRC
LSI1012XT1G
Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
LRC
LSI1013XT1G
mos场效应晶体管,20v,6a,p-ch,sc89
LRC
LSIC1MO120G0040
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