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AO3418
Manufacturer
MSKSEMIManufacturer Product Number
AO3418
Description
类型：N沟道漏源电压(Vdss)：-30V连续漏极电流(Id)：3.8A功率(Pd)：278MW导通电阻(RDS(on)@Vgs,Id)：45mΩ@10V,3A阈值电压(Vgs(th)@Id)：2.5V@250uAN沟道,30V,3.8A,45mΩ@10V
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Threshold Voltage | 2.5 V @ 250 μA |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 3.8 A |
| Power | 278mW |
| On-Resistance | 45mΩ@10V,3A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 230
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 10+ | $ 0.0641 | |
| 100+ | $ 0.0515 | |
| 300+ | $ 0.0446 | |
| 3000+ | $ 0.0404 | |
| 6000+ | $ 0.0362 | |
| 9000+ | $ 0.0334 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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AO3418-HXY
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AO3419
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TECH PUBLIC
AO3419
场效应管(MOSFET) 1.4W 20V 3.5A 1个P沟道 SOT-23-3L
AOS
AO3419
类型：P沟道漏源电压(Vdss)：-20V连续漏极电流(Id)：-3.3A功率(Pd)：1.5W导通电阻(RDS(on)@Vgs,Id)：60mΩ@4.5V,3A阈值电压(Vgs(th)@Id)：1.2V@250uAP沟道,-20V,-3.3A,60mΩ@-4.5V
MSKSEMI
