Manufacturer
MSKSEMIManufacturer Product Number
MMDT3052DW
Description
晶体管类型:2个NPN集射极击穿电压(Vceo):50V集电极电流(Ic):200mA功率(Pd):150mW集电极截止电流(Icbo):100nA集电极-发射极饱和电压(VCE(sat)@Ic,Ib):300mV@100mA,10mA特征频率(fT):200MHz工作温度:+125℃@(Tj)
Manufacturer Standard Lead Time
5-7个
Detailed Description
晶体管类型:2个NPN集射极击穿电压(Vceo):50V集电极电流(Ic):200mA功率(Pd):150mW集电极截止电流(Icbo):100nA集电极-发射极饱和电压(VCE(sat)@Ic,Ib):300mV@100mA,10mA特征频率(fT):200MHz工作温度:+125℃@(Tj)
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Jing Ti Guan Type | NPN |
| Power | 150 mW |
| Te Zheng Frequency | 200MHz |
| Ji She Ji Ji Chuan Voltage(vceo) | 50V |
| Ji Dian Ji Jie Zhi Current(icbo) | 100nA |
| Ji Dian Ji Current(ic) | 200mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 300mV@100mA, 10mA |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 20+ | $ 0.0251 | |
| 200+ | $ 0.0195 | |
| 600+ | $ 0.0167 | |
| 3000+ | $ 0.0139 | |
| 9000+ | $ 0.0125 | |
| 21000+ | $ 0.0125 |
Minimum:1/Multiple:1
Total amount: