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MS16N65S

Manufacturer

MSKSEMI

Manufacturer Product Number

MS16N65S

Description

此款N沟道MOSFET采用TO-263封装,漏源电压(Vdss):650V,漏极电流(Id):16A,具有低导通电阻和快速开关功能,漏源导通电阻(RDS(on)):0.55Ω @ VGS=10V广泛应用于开关电源、马达驱动、逆变器、电池管理系统以及其他高压大电流开关应用,例如太阳能逆变系统、电源适配器、充电桩等

Manufacturer Standard Lead Time

5-7个

Detailed Description

此款N沟道MOSFET采用TO-263封装,漏源电压(Vdss):650V,漏极电流(Id):16A,具有低导通电阻和快速开关功能,漏源导通电阻(RDS(on)):0.55Ω @ VGS=10V广泛应用于开关电源、马达驱动、逆变器、电池管理系统以及其他高压大电流开关应用,例如太阳能逆变系统、电源适配器、充电桩等

Product Attributes

Type Description
Category Boxes, Enclosures, Racks andBox Components

Documents & Media

Resource Type Link

Environmental & Export Classifications

Attribute Description

Additional Resources

Attribute Description

In Stock: 369

Quantity Unit Price Ext Price
1+ $ 0.6308
10+ $ 0.5083
30+ $ 0.4470
100+ $ 0.3857
500+ $ 0.3495
1000+ $ 0.3300
Price For:Each

Minimum:1/Multiple:1

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