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MS20N65F

Manufacturer

MSKSEMI

Manufacturer Product Number

MS20N65F

Description

此款N沟道MOSFET采用TO-220F封装,漏源电压(Vdss):650V,漏极电流(Id):20A具有低导通电阻和快速开关功能,漏源导通电阻 (RDS(on)):0.47Ω@ VGS=10V,可适用于开关电源、电机驱动、LED照明、电池管理系统、消费类电子产品等,满足你的电路设计需求

Manufacturer Standard Lead Time

5-7个

Detailed Description

此款N沟道MOSFET采用TO-220F封装,漏源电压(Vdss):650V,漏极电流(Id):20A具有低导通电阻和快速开关功能,漏源导通电阻 (RDS(on)):0.47Ω@ VGS=10V,可适用于开关电源、电机驱动、LED照明、电池管理系统、消费类电子产品等,满足你的电路设计需求

Product Attributes

Type Description
Category Boxes, Enclosures, Racks andBox Components

Documents & Media

Resource Type Link

Environmental & Export Classifications

Attribute Description

Additional Resources

Attribute Description

In Stock: 0

Quantity Unit Price Ext Price
1+ $ 0.7506
10+ $ 0.6071
30+ $ 0.5375
100+ $ 0.4484
500+ $ 0.4066
1000+ $ 0.3843
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Minimum:1/Multiple:1

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