Manufacturer
MSKSEMIManufacturer Product Number
MS30N06
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
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| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Continuous Drain Current | 30 A |
| Power | 31.3W |
| Gate Charge | 19 nC @ 10 V |
| On-Resistance | 23mΩ@10V,15A |
| Reverse Transfer Capacitance | 46pF@15V |
| Input Capacitance | 1.027nF@15V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2228 | |
| 50+ | $ 0.1963 | |
| 150+ | $ 0.1852 | |
| 500+ | $ 0.1699 | |
| 2500+ | $ 0.1532 | |
| 5000+ | $ 0.1504 |
Minimum:1/Multiple:1
Total amount:
MS30N06DF
此款N沟道场效应晶体管采用紧凑的DFN3x3,具备漏源电压(Vdss):60V,连续漏极电流(Id):30A,RDS:10V@10A=28MR,广泛应用于电池管理、负载开关、电机控制、LED驱动、便携式设备、嵌入式系统及众多消费电子产品的电源管理
MSKSEMI
MS30N06NF
此款N沟道场效应晶体管采用紧凑的DFN5X6,具备漏源电压(Vdss):60V,连续漏极电流(Id):30A,RDS:10V@10A=24MR,广泛应用于电池管理、负载开关、电机控制、LED驱动、便携式设备、嵌入式系统及众多消费电子产品的电源管理
MSKSEMI