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LND150N8-G
Manufacturer
MicrochipManufacturer Product Number
LND150N8-G
Description
场效应管(MOSFET) 1.6W 500V 30mA 1个N沟道 SOT-89-3
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 500V |
| Input Capacitance | 1pF |
| Drain-Source On-Resistance | 1000Ω |
| Drain-Source Saturation Current | 0.03A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 8
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0166 | |
| 100+ | $ 0.8411 | |
| 1000+ | $ 0.7562 | |
| 2000+ | $ 0.7199 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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