Manufacturer
NexperiaManufacturer Product Number
GAN3R2-100CBEAZ
Description
Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
Manufacturer Standard Lead Time
5-7个
Detailed Description
Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | N-channel |
| Operating Temperature | -40℃~150℃ |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 60A |
| Power | 394W |
| Gate Charge | 12nC @ 5V |
| On-Resistance | 3.2mΩ @ 25A, 5V |
| Threshold Voltage | 2.5V @ 9mA |
| Input Capacitance | 1000pF @ 50V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 4.2737 | |
| 10+ | $ 3.6624 | |
| 30+ | $ 3.2975 | |
| 100+ | $ 2.9299 | |
| 500+ | $ 2.7600 | |
| 1500+ | $ 2.6834 |
Minimum:1/Multiple:1
Total amount: