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GAN3R2-100CBEAZ

Manufacturer

Nexperia

Manufacturer Product Number

GAN3R2-100CBEAZ

Description

Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W

Manufacturer Standard Lead Time

5-7个

Detailed Description

Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W

Product Attributes

Type Description
Category Boxes, Enclosures, Racks andBox Components
Type N-channel
Operating Temperature -40℃~150℃
Drain-Source Voltage 100 V
Continuous Drain Current 60A
Power 394W
Gate Charge 12nC @ 5V
On-Resistance 3.2mΩ @ 25A, 5V
Threshold Voltage 2.5V @ 9mA
Input Capacitance 1000pF @ 50V

Documents & Media

Resource Type Link

Environmental & Export Classifications

Attribute Description

Additional Resources

Attribute Description

In Stock: 2

Quantity Unit Price Ext Price
1+ $ 4.2737
10+ $ 3.6624
30+ $ 3.2975
100+ $ 2.9299
500+ $ 2.7600
1500+ $ 2.6834
Price For:Each

Minimum:1/Multiple:1

Total amount:

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