Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
PMGD280UN,115
Manufacturer
NexperiaManufacturer Product Number
PMGD280UN,115
Description
场效应管(MOSFET) 400mW 20V 870mA 2个N沟道 SC-70-6(SOT-363)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250µA |
| Type | Dual N-Channel |
| Power | 400 mW |
| Continuous Drain Current | 870 mA |
| Input Capacitance | 45 pF @ 20 V |
| On-Resistance | 340 mΩ @ 200 mA, 4.5 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 37,435
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2298 | |
| 50+ | $ 0.1782 | |
| 150+ | $ 0.1574 | |
| 500+ | $ 0.1309 | |
| 3000+ | $ 0.1184 | |
| 6000+ | $ 0.1114 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
PMGD280UN-VB
--
Vbsemi
PMGD290UCEAX
Trans MOSFET N/P-Ch 20V 0.725A/0.5A 6-Pin TSSOP T/R
Nexperia
PMGD290XN,115
Dual N-Channel 20 V 350 mO 0.41 W 0.72 nC Surface Mount �TrenchMOS - SOT-363
Nexperia
PMGD780SN,115
Dual N-Channel 60 V 0.92 Ohm 410 mW 1.05 nC �TrenchMOS Standard FET - SOT-363
Nexperia