Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
PMV55ENEAR
Manufacturer
NexperiaManufacturer Product Number
PMV55ENEAR
Description
场效应管(MOSFET) 478mW；8.36W 60V 3.1A 1个N沟道 TO-236AB
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 60 V |
| Type | N-channel |
| Threshold Voltage | 2.7V @ 250µA |
| Continuous Drain Current | 3.1 A |
| Gate Charge | 19 nC @ 10 V |
| Power | 478mW, 8.36W |
| On-Resistance | 60mΩ @ 3.1A, 10V |
| Input Capacitance | 646 pF @ 30 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 55
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5222 | |
| 10+ | $ 0.4219 | |
| 30+ | $ 0.3802 | |
| 100+ | $ 0.3272 | |
| 500+ | $ 0.3036 | |
| 1000+ | $ 0.2883 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllPMV56XN,215
MOSFET LOW LEVEL FET
NXP
PMV60ENEAR
场效应管(MOSFET) 615mW；7.5W 40V 3A 1个N沟道 SOT-23
Nexperia
PMV65ENEAR
场效应管(MOSFET) 490mW；6.25W 40V 2.7A 1个N沟道 SOT-23
Nexperia
PMV65UNER
Trans MOSFET N-CH 20V 2.8A 3-Pin TO-236AB T/R
Nexperia
