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FDB029N06
Manufacturer
OnsemiManufacturer Product Number
FDB029N06
Description
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDB029N06, 120 A，193 A, Vds=60 V, 3引脚 D2PAK (TO-263)封装
Manufacturer Standard Lead Time
8-12
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 60 V |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Threshold Voltage | 4.5V@250μA |
| Continuous Drain Current | 120 A |
| Power | 231W |
| Gate Charge | 151nC@10V |
| Input Capacitance | 9815pF@25V |
| On-Resistance | 3.1mΩ@75A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
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|---|
Additional Resources
| Attribute | Description |
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