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FQD13N06LTM
Manufacturer
OnsemiManufacturer Product Number
FQD13N06LTM
Description
场效应管(MOSFET) 2.5W；28W 60V 11A 1个N沟道 TO-252AA
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Drain-Source Saturation Current | 11 A |
| Drain-Source On-Resistance | 0.145Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,679
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7715 | |
| 100+ | $ 0.5877 | |
| 1250+ | $ 0.5069 | |
| 2500+ | $ 0.4874 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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FQD13N06LTM(UMW)
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场效应管
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FQD13N10LTM
N沟道,100V,10A,180mΩ@10V
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