Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
FQD3P50TM
Manufacturer
OnsemiManufacturer Product Number
FQD3P50TM
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Input Capacitance | 660pF@25V |
| Type | 1 P-Channel |
| Drain-Source Voltage | 500V |
| Threshold Voltage | 5V@250μA |
| Gate Charge | 23nC@10V |
| Continuous Drain Current | 2.1A |
| Power | 2.5W, 50W |
| On-Resistance | 4.9Ω@10V,1.05A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,431
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.2169 | |
| 10+ | $ 1.4552 | |
| 25+ | $ 1.2965 | |
| 50+ | $ 1.1502 | |
| 100+ | $ 0.9915 | |
| 250+ | $ 0.8787 | |
| 500+ | $ 0.7673 | |
| 1000+ | $ 0.7144 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllFQD4N20TM
N-Channel 200 V 1.4 Ohm Surface Mount Mosfet - TO-252-3
Onsemi
FQD4N20TM
MOSFET 200V N-Ch QFET Logic Level
Fairchild
FQD4N25TM-WS
TO-252 3L (DPAK)250V, NCH MOSFET
Onsemi
FQD50N06-HXY
--
HUAXUANYANG
