Manufacturer
OnsemiManufacturer Product Number
MC1413BDR2G
Description
高电压、大电流达林顿晶体管阵列
Manufacturer Standard Lead Time
2-3
Detailed Description
高电压、大电流达林顿晶体管阵列
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Ji She Ji Ji Chuan Voltage(vceo) | 50V |
| Ji Dian Ji Current(ic) | 500mA |
| Jing Ti Guan Type | 7 NPN Darlington |
| DC Gain (hFE@Ic, Vce) | 1000 @ 350mA, 2V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.6V @ 500µA, 350mA |
| Operating Temperature | 150℃ (TJ) |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4442 | |
| 100+ | $ 0.3398 | |
| 1250+ | $ 0.2938 | |
| 2500+ | $ 0.2757 |
Minimum:1/Multiple:1
Total amount: