Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MGSF1N03LT1G
Manufacturer
OnsemiManufacturer Product Number
MGSF1N03LT1G
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source On-Resistance | 0.1Ω |
| Drain-Source Saturation Current | 1.6A |
| Power | 0.42W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,805
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1379 | |
| 50+ | $ 0.1100 | |
| 150+ | $ 0.0947 | |
| 500+ | $ 0.0766 | |
| 3000+ | $ 0.0682 | |
| 6000+ | $ 0.0641 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
MGSF1N03LT1G-VB
--
Vbsemi
MGSF2N02EL-HXY
--
HUAXUANYANG
MGSF2N02ELT1G
--
TECH PUBLIC
MGSF2N02ELT1G
场效应管(MOSFET) 1.25W 20V 2.8A 1个N沟道 SOT-23-3
Onsemi
