Manufacturer
OnsemiManufacturer Product Number
MJD41CT4G
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
--
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -65℃~150℃ |
| Jing Ti Guan Type | NPN |
| Ji Dian Ji Current(ic) | 6A |
| Te Zheng Frequency | 3MHz |
| Ji She Ji Ji Chuan Voltage(vceo) | 100V |
| Ji Dian Ji Jie Zhi Current(icbo) | 50µA |
| Power | 1.75W |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.5V@600mA, 6A |
| DC Gain (hFE@Ic, Vce) | 15@3A, 4V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.9219 | |
| 50+ | $ 0.7687 | |
| 100+ | $ 0.6127 | |
| 500+ | $ 0.4763 | |
| 1000+ | $ 0.4331 |
Minimum:1/Multiple:1
Total amount:
MJD41CT4G(MS)
此款MJD41CT4G达林顿三极管,类型:NPN型集电极电流(Ic):6A,集射极击穿电压(Vceo):100V,它具备比普通单个三极管更大的电流驱动能力,采用表面贴装TO-252(DPAK),广泛应用在功率放大器、电机驱动、继电器驱动、开关电路以及各种需要高电流输出的应用场合
MSKSEMI
MJD42C(MS)
此款MJD42C,类型:PNP型,集电极电流(Ic):6A,集射极击穿电压(Vceo):100V,采用表面贴装TO-252(DPAK)可用于各种需要大电流开关或放大的场合,例如电机驱动、电源管理、音频放大、继电器驱动、LED灯串驱动等
MSKSEMI