Manufacturer
OnsemiManufacturer Product Number
NDT3055L
Description
N 沟道逻辑电平增强型场效应晶体管,60V,4A,100mΩ
Manufacturer Standard Lead Time
2-3
Detailed Description
N 沟道逻辑电平增强型场效应晶体管,60V,4A,100mΩ
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Continuous Drain Current | 4A |
| Drain-Source Voltage | 60 V |
| Type | N-channel |
| Operating Temperature | -65℃~150℃ |
| Threshold Voltage | 2V@250μA |
| Power | 3W |
| Gate Charge | 20nC@10V |
| On-Resistance | 100mΩ@4A, 10V |
| Input Capacitance | 345pF@25V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5403 |
Minimum:1/Multiple:1
Total amount: