Manufacturer
OnsemiManufacturer Product Number
NGTB25N120FL2WAG
Description
IGBT 電晶體 1200V/25 FAST IGBT FSII T
Manufacturer Standard Lead Time
8-12
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Ji Dian Ji Ji Chuan Voltage(vces) | 1200V |
| Operating Temperature | -55℃ ~ 175℃ |
| Ji Dian Ji Current(ic) | 100A |
| Ji Dian Ji Mai Chong Current(icm) | 100A |
| Power | 385W |
| Kai Qi Yan Chi Time | 17 ns |
| Type | Field Cut-off |
| Guan Duan Sun Hao | 660 µJ |
| Ji Dian Ji Bao He Voltage(vce(sat)) | 2.4V@15V, 25A |
| Dao Tong Sun Hao | 990µJ |
| Fan Xiang Hui Fu Time | 136ns |
| Gate Charge | 181nC |
| Guan Duan Yan Chi Time | 113ns |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|
Minimum:1/Multiple:1
Total amount: