Manufacturer
OnsemiManufacturer Product Number
NSS12100XV6T1G
Description
两极晶体管 - BJT 12V PNP LOW VCE(SAT) XTR
Manufacturer Standard Lead Time
10-15
Detailed Description
两极晶体管 - BJT 12V PNP LOW VCE(SAT) XTR
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Power | 500mW |
| Jing Ti Guan Type | PNP |
| Ji Dian Ji Jie Zhi Current(icbo) | 100nA |
| Ji Dian Ji Current(ic) | 1A |
| DC Gain (hFE@Ic, Vce) | 100@500mA,2V |
| Ji She Ji Ji Chuan Voltage(vceo) | 12V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 440mV@100mA, 1A |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7227 | |
| 10+ | $ 0.4526 | |
| 100+ | $ 0.2938 | |
| 500+ | $ 0.2242 | |
| 1000+ | $ 0.2033 | |
| 2000+ | $ 0.1880 | |
| 4000+ | $ 0.1824 |
Minimum:1/Multiple:1
Total amount: