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NSVDTA114EET1G
Manufacturer
OnsemiManufacturer Product Number
NSVDTA114EET1G
Description
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Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 200 mW |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Ji Dian Ji Jie Zhi Current（icbo） | 500nA |
| Ji Dian Ji Current（ic） | 100mA |
| Input Resistance | 10kΩ |
| Jing Ti Guan Type | PNP-Pre-biased |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 250mV@300µA, 10mA |
| DC Gain (hFE@Ic, Vce) | 35@5mA, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,175
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2089 | |
| 10+ | $ 0.1267 | |
| 100+ | $ 0.0780 | |
| 500+ | $ 0.0571 | |
| 1000+ | $ 0.0501 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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