Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
NTHD3100CT1G
Manufacturer
OnsemiManufacturer Product Number
NTHD3100CT1G
Description
MOSFET 20V +3.9A/-4.4A Complementary
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source On-Resistance | 0.08Ω |
| Drain-Source Saturation Current | 2.9A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 34,649
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.7113 | |
| 10+ | $ 1.7156 | |
| 100+ | $ 1.1433 | |
| 500+ | $ 0.8982 | |
| 1000+ | $ 0.8188 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllNTHD3101FT1G
MOSFET P-CH 20V 3.2A CHIPFET
Onsemi
NTHD3102CT1G
--
Onsemi
NTHD4102PT1G
Dual P-Channel 20 V 64 mOhm 1.1 W Surface Mount Power MOSFET - CASE 1206A
Onsemi
NTHD4102PT1G
MOSFET -20V -4.1A Dual P-Channel
Onsemi
