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NTR4101PT1G
Manufacturer
OnsemiManufacturer Product Number
NTR4101PT1G
Description
P沟道,-20V,-3.2A,70mΩ@-4.5V
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source Saturation Current | 1.8 A |
| Drain-Source On-Resistance | 0.085Ω |
| Input Capacitance | 75pF |
| Power | 0.73 W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,698
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1560 | |
| 200+ | $ 0.1072 | |
| 1500+ | $ 0.0975 | |
| 3000+ | $ 0.0905 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
NTR4101PT1G-MS
类型：P沟道漏源电压(Vdss)：-20V连续漏极电流(Id)：-3.2A功率(Pd)：1.56W导通电阻(RDS(on)@Vgs,Id)：70mΩ@-4.5V,-3A阈值电压Vgs(th)@Id)：-0.3V至-1.2V@250uA
MSKSEMI
NTR4101PT1G-VB
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NTR4101PT1H
Trans MOSFET P-CH 20V 3.2A 3-Pin SOT-23 T/R
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