Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
NTR5198NLT1G
Manufacturer
OnsemiManufacturer Product Number
NTR5198NLT1G
Description
场效应管(MOSFET) 900mW 60V 1.7A 1个N沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Power | 1.5W |
| Drain-Source Saturation Current | 2.2A |
| Drain-Source On-Resistance | 0.205Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 8,872
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1936 | |
| 200+ | $ 0.1323 | |
| 1500+ | $ 0.1198 | |
| 3000+ | $ 0.1114 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
NTRV4101P
--
LEIDITECH
NTRV4101PT1G
场效应管(MOSFET) 420mW 20V 1.8A 1个P沟道 SOT-23-3
Onsemi
NTRV4101PT1G
--
Onsemi
NTRV4101PT1G
--
Onsemi
