Manufacturer
OnsemiManufacturer Product Number
NTS4173PT1G
Description
类型:P沟道 漏源电压(Vdss):30V 连续漏极电流(Id):1.2A 功率(Pd):290mW 导通电阻(RDS(on)@Vgs,Id):150mΩ@1.2A,10V 单 P 沟道,功率 MOSFET,-30V,-1.3A,150mΩ 这是一个 30 V P 沟道功率 MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 1.5V@250µA |
| Input Capacitance | 430 pF @ 15 V |
| Continuous Drain Current | 1.2A |
| Power | 290mW |
| Gate Charge | 10.1nC @ 10V |
| On-Resistance | 150mΩ @ 1.2A, 10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3648 | |
| 10+ | $ 0.1337 | |
| 50+ | $ 0.1170 | |
| 100+ | $ 0.1100 | |
| 500+ | $ 0.0975 | |
| 1000+ | $ 0.0919 | |
| 3000+ | $ 0.0836 | |
| 6000+ | $ 0.0794 |
Minimum:1/Multiple:1
Total amount: