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BC848BWT106
Manufacturer
ROHMManufacturer Product Number
BC848BWT106
Description
BC848BW Series 30 V 100 mA SMT NPN General Purpose Transistor - SC-70
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 200 mW |
| Operating Temperature | -65℃~150℃ |
| Jing Ti Guan Type | NPN |
| Te Zheng Frequency | 200MHz |
| Ji Dian Ji Current（ic） | 100mA |
| Ji She Ji Ji Chuan Voltage（vceo） | 30 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 600mV |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,750
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5696 | |
| 10+ | $ 0.3969 | |
| 100+ | $ 0.1810 | |
| 1000+ | $ 0.1379 | |
| 3000+ | $ 0.1156 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBC848BWT1G
两极晶体管 - BJT 100mA 30V NPN
Onsemi
BC848BWT1G
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Onsemi
BC848C
晶体管类型：NPN集射极击穿电压(Vceo)：30V集电极电流(Ic)：100mA功率(Pd)：200mW集电极截止电流(Icbo)：100nA集电极-发射极饱和电压(VCE(sat)@Ic,Ib)：500mV@100mA,5mA直流电流增益(hFE@Ic,Vce)：420@2mA,5V特征频率(fT)：100MHz工作温度：+150℃@(Tj)1L420-800
MSKSEMI
BC848C
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FOSAN