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DTA114YMFHAT2L
Manufacturer
ROHMManufacturer Product Number
DTA114YMFHAT2L
Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 100mA 250MHz 150mW Surface Mount VMT3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Power | 150 mW |
| Te Zheng Frequency | 250MHz |
| Jing Ti Guan Type | PNP |
| Input Resistance | 10kΩ |
| Ji She Ji Ji Chuan Voltage（vceo） | -50V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -300mV |
| Ji Dian Ji Current（ic） | -100 mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 8,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2465 | |
| 10+ | $ 0.1504 | |
| 100+ | $ 0.0919 | |
| 500+ | $ 0.0682 | |
| 1000+ | $ 0.0529 | |
| 5000+ | $ 0.0501 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDTA114YMT2L
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ROHM
DTA114YUAT106
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ROHM
DTA114YUAT106
封装/外壳：SOT-323 功率耗散Pd：200mW 晶体管类型：PNP 集电极-发射极最大电压VCEO：-50V 集电极连续电流：-100mA
ROHM
DTA114YUAT106
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ROHM
