Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
DTA123YCAT116
Manufacturer
ROHMManufacturer Product Number
DTA123YCAT116
Description
DTA123YCAT116
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 200 mW |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Te Zheng Frequency | 250MHz |
| Ji Dian Ji Jie Zhi Current（icbo） | 500nA |
| Ji Dian Ji Current（ic） | 100mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 300mV@500µA, 10mA |
| Input Resistance | 2.2kΩ |
| Jing Ti Guan Type | PNP-Pre-biased |
| DC Gain (hFE@Ic, Vce) | 22@10mA, 5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 856
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1253 | |
| 10+ | $ 0.0766 | |
| 100+ | $ 0.0515 | |
| 500+ | $ 0.0404 | |
| 1000+ | $ 0.0376 | |
| 3000+ | $ 0.0320 | |
| 6000+ | $ 0.0306 | |
| 9000+ | $ 0.0292 | |
| 15000+ | $ 0.0279 | |
| 75000+ | $ 0.0251 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDTA123YE3HZGTL
--
ROHM
DTA123YE3HZGTL
雙極結晶體管 - 預偏置 PNP, SOT-416, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor)
ROHM
DTA123YE3TL
--
ROHM
DTA123YE3TL
--
ROHM
