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QS6U22TR
Manufacturer
ROHMManufacturer Product Number
QS6U22TR
Description
MOSFET P-CH 20V 1.5A
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Power | 1.25 W |
| Drain-Source Saturation Current | 1.5A |
| Drain-Source On-Resistance | 0.235Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 100
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9079 | |
| 10+ | $ 0.5250 | |
| 50+ | $ 0.3342 | |
| 100+ | $ 0.2827 | |
| 500+ | $ 0.2674 | |
| 1000+ | $ 0.2409 | |
| 3000+ | $ 0.2145 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllQS6U24TR
栅极电压Vgs：±20V Pd-功率耗散(Max)：1.25W(Ta) Rds On(Max)@Id,Vgs：400mΩ@1A,10V 工作温度：150°C(TJ) 封装/外壳：SOT-23-6,TSOT-23-6
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栅极电压Vgs：±20V Pd-功率耗散(Max)：1.25W(Ta) Rds On(Max)@Id,Vgs：400mΩ@1A,10V 工作温度：150°C(TJ) 封装/外壳：SOT-23-6,TSOT-23-6
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