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RF4E080GNTR
Manufacturer
ROHMManufacturer Product Number
RF4E080GNTR
Description
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Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 8A |
| Drain-Source On-Resistance | 0.0228Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 100
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3997 | |
| 10+ | $ 0.3732 | |
| 25+ | $ 0.3467 | |
| 100+ | $ 0.3203 | |
| 250+ | $ 0.2952 | |
| 500+ | $ 0.2702 | |
| 1000+ | $ 0.2451 | |
| 3000+ | $ 0.2214 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRF4E100AJTCR
MOSFET Nch 30V 10A Si MOSFET
ROHM
RF4E110BNTR
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ROHM
RF4E110BNTR
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ROHM
RF4E110BNTR
连续漏极电流Id：11A Pd-功率耗散(Max)：2W Rds On(Max)@Id,Vgs：11.1mΩ 漏源极电压Vds：30V 栅极电压Vgs：2V
ROHM
