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RTR020P02HZGTL
Manufacturer
ROHMManufacturer Product Number
RTR020P02HZGTL
Description
MOSFET P-CH 20V 2A TSMT3
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Power | 1 W |
| Drain-Source Saturation Current | 2A |
| Input Capacitance | 55 pF |
| Drain-Source On-Resistance | 0.15Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,050
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2005 | |
| 50+ | $ 0.1615 | |
| 150+ | $ 0.1309 | |
| 500+ | $ 0.1100 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRTR020P02TL
MOSFET P-CH 20V 2A TSMT3
ROHM
RTR025N03FRATL
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ROHM
RTR025N03HZGTL
原装正品，假一罚十
ROHM
RTR025N03HZGTL
连续漏极电流Id：2.5A(Ta) FET类型：N-Channel 栅极电压Vgs：±12V Rds On(Max)@Id,Vgs：92mΩ@2.5A,4.5V Pd-功率耗散(Max)：700mW(Ta)
ROHM
