Manufacturer
ROHMManufacturer Product Number
RU1C001ZPTL
Description
FET类型:P-Channel 漏源极电压Vds:20V 连续漏极电流Id:100mA(Ta) 栅极电压Vgs:±10V Pd-功率耗散(Max):150mW(Ta)
Manufacturer Standard Lead Time
5-7个
Detailed Description
FET类型:P-Channel 漏源极电压Vds:20V 连续漏极电流Id:100mA(Ta) 栅极电压Vgs:±10V Pd-功率耗散(Max):150mW(Ta)
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Power | 0.15W |
| Drain-Source Saturation Current | 0.1A |
| Drain-Source On-Resistance | 3.8Ω |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 10+ | $ 0.0613 | |
| 100+ | $ 0.0446 | |
| 300+ | $ 0.0348 | |
| 3000+ | $ 0.0306 | |
| 6000+ | $ 0.0279 | |
| 9000+ | $ 0.0265 |
Minimum:1/Multiple:1
Total amount:
RU1C002UNTCL
连续漏极电流Id:200mA Pd-功率耗散(Max):150mW Rds On(Max)@Id,Vgs:1.2Ω@200mA,2.5V 漏源极电压Vds:20V 栅极电压Vgs:±8V
ROHM