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TT8M1TR
Manufacturer
ROHMManufacturer Product Number
TT8M1TR
Description
Rds On(Max)@Id,Vgs：72mΩ@2.5A,4.5V Pd-功率耗散(Max)：1W 工作温度：150°C(TJ) 封装/外壳：TSST FET类型：N+P-Channel
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Power | 1.25 W |
| Drain-Source On-Resistance | 0.09Ω |
| Drain-Source Saturation Current | 2.5A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 100
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5194 | |
| 10+ | $ 0.5055 | |
| 30+ | $ 0.4957 | |
| 100+ | $ 0.4888 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllTT8M2TR
30V, 2.5A, 0.009 ohms @ 4.5V, TSST8
ROHM
TT8MF
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MDD
TT8T08-13
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Diodes
TT8U1TR
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ROHM
