Manufacturer
ROHMManufacturer Product Number
UM6J1NTN
Description
Rds On(Max)@Id,Vgs:1.4Ω@200mA,10V Pd-功率耗散(Max):150mW 工作温度:-55°C~150°C 封装/外壳:SOT-363 FET类型:P-Channel
Manufacturer Standard Lead Time
5-7个
Detailed Description
Rds On(Max)@Id,Vgs:1.4Ω@200mA,10V Pd-功率耗散(Max):150mW 工作温度:-55°C~150°C 封装/外壳:SOT-363 FET类型:P-Channel
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Power | 0.15W |
| Drain-Source Saturation Current | 0.2A |
| Drain-Source On-Resistance | 1.4Ω |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1365 | |
| 50+ | $ 0.1184 | |
| 150+ | $ 0.1100 | |
| 500+ | $ 0.1003 |
Minimum:1/Multiple:1
Total amount: