Manufacturer
ROHMManufacturer Product Number
US6K2TR
Description
Rds On(Max)@Id,Vgs:240mΩ@1.4A,10V Pd-功率耗散(Max):1W 工作温度:150°C(TJ) 封装/外壳:TUMT FET类型:N-Channel
Manufacturer Standard Lead Time
5-7个
Detailed Description
Rds On(Max)@Id,Vgs:240mΩ@1.4A,10V Pd-功率耗散(Max):1W 工作温度:150°C(TJ) 封装/外壳:TUMT FET类型:N-Channel
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Power | 1 W |
| Drain-Source On-Resistance | 0.38Ω |
| Drain-Source Saturation Current | 1.4 A |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1253 | |
| 50+ | $ 0.0836 | |
| 150+ | $ 0.0599 | |
| 500+ | $ 0.0515 | |
| 3000+ | $ 0.0473 | |
| 6000+ | $ 0.0446 |
Minimum:1/Multiple:1
Total amount: